Highvoltage LED driver based on SOI process
ZHU Jianhui, HE Lenian, LIN Ling
(Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China)
Abstract: In order to expand the application of LED driver into highvoltage region, the silicononinsulator(SOI) technology was used. Based on this technology, an LED driver was designed. The system diagram of the LED driver was introduced at first and then the important blocks were described in detail. This LED driver works in peak current mode, and has a wide input range from 40 V to 625 V. It provides two dimming functions: linear dimming and pulse width modulation(PWM) dimming, and could be used in tens to a hundred series LED applications. The prototype chip was designed by Cadence Spectre tools and fabricated in XFAB 1 μm SOI Process. The simulation and test results verify this design. This research lays the foundation for the design of the highvoltage power management chips which are based on SOI process.
Key words: silicononinsulator(SOI); highvoltage; LED driver; peakcurrent mode; pulse width modulation(PWM)