Design method of SRAMspecific test structure for yield improvement

XIONG Jian, PAN Weiwei, SHI Zheng

(Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China)

Abstract: Yield of SRAM is essential to massproduction of semiconductor products. Aiming at the incapacity of general test structures to meet special requirements of SRAM, a design method of SRAMspecific test structures for yield improvement was described. It was built based on the oriented SRAM cells which were modified and then rearranged into an array environment to collect information of process defect. Results indicate that this method is SRAMproductoriented to capture open/short defect caused by violation of the special SRAM design rule, further to correct design error for yield improvement.
Key words: static random access memory(SRAM); yield; test structure