5 GHz LNA based on CHRT 0.18 μm CMOS technology

NAN Chao-zhou，YU Xiao-peng
（Institute of VLSI Design， Zhejiang University， Hangzhou 310027， China）

Abstract： Aiming at fulfilling the demand of wireless LAN communication standard，experimental studies on low noise amplifier（LNA） with inductive source degeneration were presented. The design was implemented in CHART 0.18 μm complementary metal-oxide-semiconductor（CMOS）technology. As the key parts of the consideration in a LNA design，the crucial trade-offs of key parameters and performance，including input noise matching，the impact on the performance of noise introduced by miller effect and the solution were carefully taken into consideration. The results indicate that，the key target can satisfy the requirements of wireless communication in 5 GHz range，such as NF，linearity and gain，under the condition of ultra-low power（Pcom < 4 mW），the NF is less than 3 dB.
Key words： wireless LAN；complementary metal-oxide-semiconductor（CMOS）；low noise amplifier（LNA）；miller effect cancellation