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Design of IGBT over-current protection circuit
Published:2012-11-13 author:ZHANG Hai-liang, CHEN Guo-ding, XIA De-yin Browse: 3392 Check PDF documents

Design of IGBT over-current protection circuit

ZHANG Hai-liang, CHEN Guo-ding, XIA De-yin
(School of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China)

Abstract: In order to solve the over-current breakdown problem of insulated gate bipolar transistor(IGBT)in practical applications,short-circuit protection circuit and overload protection circuits were proposed according to the IGBT's collector current,after the analysis of IGBT's characteristics and over-current measures. When overload protection circuits detected over-current,it switched off IGBT immediately,IGBT's drive signal can be blocked continuously,for fixed time or for a single cycle based on different overload protection requirements;short-circuit protection circuit detected the over-current by measuring IGBT's on-state voltage drop,using dropping the grid voltage,soft switch-off and reducing IGBT's working frequency the circuit can decrease short-circuit current and switch off IGBT safely. Detailed elaboration of circuits' operating mechanism was given. The over-current testing of the all designed protection circuits  was done. The waveform graphs were obtained. The experimental results indicate that protection circuits can detect over-current in time and response accurately,IGBT is protected reliably under different over-current conditions.
Key words: instulated gate bipolar transistor(IGBT);over-current protection;drop grid voltage;soft switch off

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