Research of thermal stress in IGBT module

ZHAI Chao, GUO Qing, SHENG Kuang
(College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China)

Abstract: In order to solve the problems of improving reliability of insulated gate bipolar transistor(IGBT) module in practical application and predicting life of IGBT module, finite element analysis technology was used in the temperature cycles experiment. After the analysis of the thermal stress of the multilayer structure, the relationship between the max thermal stress of multilayer structure and detachment of IGBT module was established. A method was presented to predict detachment of IGBT module by calculating the max thermal stress in practical application. The IGBT module temperature cycle was tested. The experimental results show that, the method of predicting detachment of IGBT module by calculating the max thermal stress is accurate.
Key words: insulated gate bipolar transistor(IGBT); thermal stress; reliability; finite element analysis; temperature cycle