GU Tong，CHENG Shi-dong，GUO Qing，ZHOU Wei-cheng，SHENG Kuang

（College of Electrical Engineering，Zhejiang University，Hangzhou 310027，China）

Abstract：In order to reduce the parasitic inductance of insulated gate bipolar transistor（IGBT）half- bridge module and raise the efficiency of the whole practical circuit，a module structure with improved chip layout was proposed. The working behavior of half-bridge module in power electronic circuits and the working condition of every device were taken into account. Those chips that are in the same working circuit loop were placed in close vicinity. Both the conventional and the proposed modules were fabricated in the same package size for package compatibility. Inductance test circuit was built. The experimental results show that，the parasitic inductance of the proposed module decreases by 35%，compared with the conventional one without modifying the module electrodes.

Key words：insulated gate bipolar transistor（IGBT）；half-bridge module；parasitic inductance；chip layout