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Application of SiC diode in high frequency and high power current inverter
Published:2017-08-14 author: WANG Shuai, ZHAN Tianxia, FENG Ye, CHEN Huiming Browse: 3068 Check PDF documents
Application of SiC diode in high frequency and high power current inverter
WANG Shuai, ZHAN Tian xia, FENG Ye, CHEN Hui ming
(School of Electrical and Information Engineering, Zhejiang University, Hangzhou 310000, China)


Abstract: Aiming at the problem that the switching loss of the current mode inverter was larger when the bridge arm was expanded in parallel. The forward and reverse recovery characteristics of SiC Schottky diodes and Si fast recovery diodes, the parallel current sharing of MOSFET and the working process of current inverters were studied respectively. Then the replacement of Si fast recovery diode with SiC Schottky diode in the inverter to maintain good inverter parallel current sharing effect while reducing inverter losses was proposed. At last current based inverter experimental platforms based on Si fast recovery diode and SiC Schottky diode were built respectively to verify the actual performance of SiC Schottky diode in system expansion. The results indicate that the use of SiC Schottky diodes in current mode inverters can achieve good parallel current sharing effect while greatly reducing inverter losses and improve inverter efficiency.

Key words: SiC diodes; current type inverter; parallel current sharing

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