New modeling and transient simulation of IGBT
                SHEN Tianhao1, HUANG Rui1, YANG Fan2, CHEN Junxuan1, FENG Quan1, HONE Wenhua1, YU Xiaoli1
(1.College of Energy Engineering, Zhejiang University, Hangzhou 310000, China;2.SAIC Volkswagen Co. Ltd., Shanghai 201805, China)

Abstract: Aiming at the lack of overall assessment on IGBT module simulation, a new type method was proposed: The transient loss of IGBT module in working process was analyzed and calculated and the fluidsolid coupling method was adopted. 1D simulation was used to calculate the transient loss of Infineon FS800R07A2E3 Module. The transient loss was equivalent to halfsine wave and loaded into the 3D model as boundary conditions. The fluctuation and distribution of junction temperature were studied by the coupled method of transient simulation and 3D simulation based on StarCCM+ software. Meanwhile, Infineon experimental data was adopted to verify the accuracy of the model. The results indicate that a step change about 2 ℃ in U/V/W phases and the maximum junction temperature in transient simulation is about 7 ℃ higher than the steady state. The actual working situation of IGBT is better simulated by this new method.

Key words: MCU; IGBT; junction temperature; transient; fluidsolid coupling