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Zhejiang Machinery and Electrical Group

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Influence of MOSFET reverse recovery on boundary conduction mode totem pole Boost PFC
Published:2018-09-20 author:ZHAO Chenkai, WU Xinke Browse: 319 Check PDF documents
                            Influence of MOSFET reverse recovery on boundaryconduction mode totem pole Boost PFC
                                                                         ZHAO Chenkai, WU Xinke
                                  (College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China)

Abstract: Aiming at the problem that traditional boundary conduction mode (BCM) design methodology does not consider the effect of reverse recovery causing the error between calculation and experimental result of totem pole boost PFC, the linear fit method was investigated. After the mode analysis of BCM totem pole Boost PFC with reverse recovery, the relationship between inductor current positive peak value and negative charge was established. A method was presented to predict negative charge. The influence of reverse recovery was evaluated on the 600 W totem pole Boost PFC with two different MOSFETs. The experimental results indicate that the proposed design methodology is more accurate, and the reverse recovery increases the inductor current, decreases switching frequency and expands ZVSON zone.

Key words: totempole Boost PFC; boundary conduction mode; reverse recovery

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